E. Robilliart: search on Z-Library

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1

Body effect induced wear-out acceleration in ultra-thin oxides

S. Bruyère, D. Roy, E. Robilliart, E. Vincent, G. Ghibaudo

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 372 KB

english, 2001

2

Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress

Gallon, C., Reimbold, G., Ghibaudo, G., Bianchi, R.A., Gwoziecki, R., Orain, S., Robilliart, E., Raynaud, C., Dansas, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 931 KB

english, 2004

3

[IEEE 1996 IEEE International SOI Conference Proceedings - Sanibel Island, FL, USA (30 Sept.-3 Oct. 1996)] 1996 IEEE International SOI Conference Proceedings - Non-quasi-static SOI MOSFET model dedicated for analog circuit design

Robilliart, E., Dubois, E.

Year:

1996

Language:

english

File:

PDF, 275 KB

english, 1996

4

[IEEE 1996 IEEE International Symposium on Circuits and Systems. Circuits and Systems Connecting the World. ISCAS 96 - Atlanta, GA, USA (12-15 May 1996)] 1996 IEEE International Symposium on Circuits and Systems. Circuits and Systems Connecting the World. ISCAS 96 - Physical MOSFET's model for analog circuit design: application to current copier based architectures

Robilliart, E., Dubois, E.

Year:

1996

Language:

english

File:

PDF, 381 KB

english, 1996

5

Nonquasistatic transient model of fully-depleted SOI MOSFET and its application to the analysis of charge sharing in an analog switch

Dubois, E., Robilliart, E.

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 64 KB

english, 2002

6

Extraction method of the base series resistances in bipolar transistor in presence of current crowding

Dubois, E., Bricout, P.H., Robilliart, E.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1996

Language:

english

File:

PDF, 455 KB

english, 1996

7

[IEEE Proceedings of the 34th European Solid-State Device Research Conference - Leuven, Belgium (21-23 Sept. 2004)] Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) - TCAD modelling of PLAD implantations and application to sub-65nm technological nodes [plasma doping]

Vet, L., Robilliart, E., Lenoble, D., Grouillet, A., Lallement, F., Dray, A., Salvetti, F., Villanueva, D., Balossier, E., Jaouen, H., Walther, S., Jeong, U., Mehta, S.

Year:

2004

Language:

english

File:

PDF, 243 KB

english, 2004

8

[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Impact of the lateral source/drain abruptness on MOSFET characteristics and transport properties

Villanueva, D., Pouydebasque, A., Robilliart, E., Skotnicki, T., Fuchs, E., Jaouen, H.

Year:

2003

Language:

english

File:

PDF, 253 KB

english, 2003

9

[IEEE ICMTS 2002. 2003 International Conference on Microelectronic Test Structures - Monterey, CA, USA (17-20 March 2003)] International Conference on Microelectronic Test Structures, 2003. - Impact of gate current on first order parameter extraction in sub-0.1 μm CMOS technologies

Planes, N., Dray, A., Robilliart, E., Brut, H.

Year:

2003

Language:

english

File:

PDF, 308 KB

english, 2003

10

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Accuracy and convergence properties of a one-dimensional numerical non-quasi-static MOSFETs model for circuit simulation

Robilliart, E., Dubois, E.

Year:

1996

Language:

english

File:

PDF, 214 KB

english, 1996

11

[IEEE IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA (10-11 Oct. 1994)] Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Accuracy of series resistances extraction schemes for polysilicon bipolar transistors

Dubois, E., Bricout, P.-H., Robilliart, E.

Year:

1994

Language:

english

File:

PDF, 285 KB

english, 1994

12

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Simulation of surface engineering for ultra shallow junction formation of PMOS for the 90nm CMOS technology node and beyond

Bonnouvrier, J., Lenoble, D., Robilliart, E., Schwartzmann, T., Jaouen, H.

Year:

2003

Language:

english

File:

PDF, 354 KB

english, 2003

13

[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - Investigations of stress sensitivity of 0.12 CMOS technology using process modeling

Senez, V., Hoffmann, T., Robilliart, E., Bouche, G., Jaouen, H., Lunenborg, M., Carnevale, G.

Year:

2001

Language:

english

File:

PDF, 588 KB

english, 2001

14

[Japan Soc. Appl. Phys Extended Abstracts of the Second International Workshop on Junction Technology - Tokyo, Japan (29-30 Nov. 2001)] Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C) - Integration of ultra-shallow junctions in sub-0.1 μm CMOS transistors : what kind of process for a "safe" advanced technology?

Lenoble, D., Halimaoui, A., Kermarrec, O., Campidelli, Y., Bensahel, D., Bonnouvrier, J., Menut, O., Robilliart, E., Perrin, E., Arnaud, F., Boeuf, F., Skotnicki, T., Grouillet, A., Bignell, G.

Year:

2001

Language:

english

File:

PDF, 704 KB

english, 2001

15

[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - Efficient non-quasi-static MOSFETs model for circuit simulation

Dubois, E., Robilliart, E.

Year:

1995

Language:

english

File:

PDF, 347 KB

english, 1995

16

[IEEE 32nd European Solid-State Device Research Conference - Firenze, Italy (2002.9.24-2002.9.26)] 32nd European Solid-State Device Research Conference - Spike Anneal Optimization for Digital and Analogue High Performance 0.13 um CMOS Platform

Josse, E., Arnaud, F., Wacquant, F., Lenoble, D., Menut, O., Robilliart, E.

Year:

2002

File:

PDF, 580 KB

2002

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